PART |
Description |
Maker |
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
UPD42S4170AG5M-70 UPD424170AV-70 UPD424170LG5M-A70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.300 INCH, PLASTIC, REVERSE, TSOP2-44/40 256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 0.400 INCH, PLASTIC, ZIP-40 256K X 16 FAST PAGE DRAM, 80 ns, PDSO40 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
|
Infineon Technologies AG
|
IS41C16257 IS41C16257-35K IS41C16257-35KI IS41C162 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu... Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
V53C256AP60 V53C256AP70 V53C256AJ80 V53C256AJ60 V5 |
256K X 1 FAST PAGE DRAM, 60 ns, PDIP16 256K X 1 FAST PAGE DRAM, 70 ns, PDIP16 256K X 1 FAST PAGE DRAM, 80 ns, PQCC18 256K X 1 FAST PAGE DRAM, 60 ns, PQCC18 256K X 1 FAST PAGE DRAM, 100 ns, PQCC18
|
MOSEL-VITELIC
|
LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
AM9016EZL AM9016DDL AM9016CZL |
16K X 1 PAGE MODE DRAM, 200 ns, CQCC18 16K X 1 PAGE MODE DRAM, 250 ns, CDIP16 16K X 1 PAGE MODE DRAM, 300 ns, CQCC18
|
ADVANCED MICRO DEVICES INC
|
V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位)的动态与江户页面模式内存
|
Integrated Circuit Solu... Cypress Semiconductor Corp. Integrated Circuit Solution Inc
|
T224160B T224160B-30 T224160B-35 T224160B-45 T2241 |
256K x 16 DYNAMIC RAM FAST PAGE MODE 256K × 16动态RAM快速页面模 Binary Coded Rotary DIP Switches
|
TM Technology, Inc. TMT[Taiwan Memory Technology]
|